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Document Number: 89141 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
SS12P4C
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters
and polarity protection
applications.
FEATURES
? Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal impedance
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
IF(AV)
2 x 6.0 A
VRRM
40 V
IFSM
150 A
EAS
20 mJ
VF
at I
F
= 6.0 A 0.40 V
TJ
max. 125 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM
Series
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS12P4C UNIT
Device marking code
S124C
Maximum repetitive peak reverse voltage VRRM
40 V
Maximum average forward rectified current (fig. 1) (1)
total device
I
per diode 6.0F(AV)
12 A
Maximum average forward rectified current (2)
total device IF(AV)
3.5 A
Peak forward surge current
10 ms single half sine-wave
superimposed on rated load per diode
IFSM
150 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
20 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
at TJ
= 25 °C per diode
IRRM
1.0 A
Operating junction and storage temperature range TJ,
T
STG
- 55 to + 125 °C
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